Zinc Nitride: Overview
The formula for zinc nitride Zn3N2, a gray crystal that is soluble with hydrochloric Acid. In cold water it decomposes quickly into zinc hydroxide, ammonia. It can be produced by combining zinc powder and ammonia gas between 500-600degC.
Useful Information
The following are some examples of how to use
Zinc Nitride
1. Zinc nitride film is prepared using this product
Zinc Nitride (Zn3N2) is a unique material with electrical and optical properties. The energy band gaps of zinc oxide, whether an indirect or direct band gap silicon, have always been a major controversy in semiconductors. The band gap can be greatly affected by the preparation methods, growth conditions and problems in industry and academia. As an example, prior art methods like magnetron deposition, chemical vapour deposition, electrostatic elctrostalysis, and molten beam epitaxy could be used to create zinc nitride layers.
Zinc oxide films made by the same technique have very different optical and electric properties. A simple, easy to reproduce and high-quality crystalline preparation method is urgently needed. A method is presented for the preparation of a zinc-nitride layer. The preparation method uses atomic layer deposition to prepare the Zinc Nitride film. This allows for precise control of the band gaps in the Zinc Nitride film. The membrane is uniformly structured and has excellent performance.
The technical solutions that were adopted include:
Steps for the preparation of zinc nitride films include:
(1) Place the substrate inside the reaction chamber.
The zinc-containing pre-deposition source is placed in the reaction chamber.
(3) Allow the nitrogen-containing pre-cursor source to enter the reaction-chamber of the atomic-layer deposition equipment and then ionize it through plasma. After ionization of the precursor source, the zinc-zinc covalent bonds are formed on the surface. Ionization of the nitrogen precursor. The source will be sent to the equipment for atomic layer deposition. After ionization the nitrogen atoms are partially deposited in the cavity. The zinc atom is bonded to the nitrogen atom by a covalent bond.
Repeat steps (2), (3) and (4) to build the zinc-nitride layer by layer.
The method can produce high-quality crystalline materials and is repeatable. It is simple to implement and achieves crystals of excellent quality. The nitrogen is introduced to the atomic layer system via the plasma. After that, the conditions of the chamber are precisely set, including the vacuum degree, the cycle period, the conditions for the plasma and the other conditions. Adjust the band-gap of the prepared zincnitride. The present invention provides various high quality zinc nitride sheets with adjustable bands gaps that can be tailored to meet different electrical and optical requirements.
2. Used to prepare touch screen covers and touch screen films
As technology advances and smart devices become more common, the demand for touch screens to be the main interface for human-computer interactions is increasing. In the prior art, the low coating yield and high production costs, as well as the low production efficiency, were problems when the light-shielding layers in the BM of the cover of the touchscreen was prepared by screen printing with black ink. It is easy for bubbles to form when the product is used together with a Liquid Crystal Display. Offer a zinc nitride-based touch screen and touchscreen cover film.
The new touch screen film is made of zinc nitride, which acts as the functional film of the black layer. This film has low surface reflection and low cost of production, and also high surface hardness. The new type is a touch-screen cover film that includes a Zn3N2 film and a Si3N4 film. The adhesion of a film decreases if its thickness exceeds 50 nm. If it’s less than 10 nm thick, then the film transmits light and does not have the light-tight effect. The zinc film is black, absorbs visible light well, and has a matte finish. It can be used to create a functional black layer. The touch-screen cover film embodiment comprises in order a zincnitride(Zn3N2)film, a silica nitride(Si3N4)film, and a protection film. The touch-screen cover in this embodiment consists of a glass substrate, the touch-screen cover film and a protective film.
(aka. Technology Co. Ltd., a global chemical material manufacturer and supplier with more than 12 years of experience in the supply of super-high-quality chemicals. Currently, we have developed a variety of materials. Our zinc nitride is produced with high purity, small particles and low impurity. Please send us an e-mail or click the desired products to Send an inquiry .
1. Zinc nitride film is prepared using this product
Zinc Nitride (Zn3N2) is a unique material with electrical and optical properties. The energy band gaps of zinc oxide, whether an indirect or direct band gap silicon, have always been a major controversy in semiconductors. The band gap can be greatly affected by the preparation methods, growth conditions and problems in industry and academia. As an example, prior art methods like magnetron deposition, chemical vapour deposition, electrostatic elctrostalysis, and molten beam epitaxy could be used to create zinc nitride layers.
Zinc oxide films made by the same technique have very different optical and electric properties. A simple, easy to reproduce and high-quality crystalline preparation method is urgently needed. A method is presented for the preparation of a zinc-nitride layer. The preparation method uses atomic layer deposition to prepare the Zinc Nitride film. This allows for precise control of the band gaps in the Zinc Nitride film. The membrane is uniformly structured and has excellent performance.
The technical solutions that were adopted include:
Steps for the preparation of zinc nitride films include:
(1) Place the substrate inside the reaction chamber.
The zinc-containing pre-deposition source is placed in the reaction chamber.
(3) Allow the nitrogen-containing pre-cursor source to enter the reaction-chamber of the atomic-layer deposition equipment and then ionize it through plasma. After ionization of the precursor source, the zinc-zinc covalent bonds are formed on the surface. Ionization of the nitrogen precursor. The source will be sent to the equipment for atomic layer deposition. After ionization the nitrogen atoms are partially deposited in the cavity. The zinc atom is bonded to the nitrogen atom by a covalent bond.
Repeat steps (2), (3) and (4) to build the zinc-nitride layer by layer.
The method can produce high-quality crystalline materials and is repeatable. It is simple to implement and achieves crystals of excellent quality. The nitrogen is introduced to the atomic layer system via the plasma. After that, the conditions of the chamber are precisely set, including the vacuum degree, the cycle period, the conditions for the plasma and the other conditions. Adjust the band-gap of the prepared zincnitride. The present invention provides various high quality zinc nitride sheets with adjustable bands gaps that can be tailored to meet different electrical and optical requirements.
2. Used to prepare touch screen covers and touch screen films
As technology advances and smart devices become more common, the demand for touch screens to be the main interface for human-computer interactions is increasing. In the prior art, the low coating yield and high production costs, as well as the low production efficiency, were problems when the light-shielding layers in the BM of the cover of the touchscreen was prepared by screen printing with black ink. It is easy for bubbles to form when the product is used together with a Liquid Crystal Display. Offer a zinc nitride-based touch screen and touchscreen cover film.
(aka. Technology Co. Ltd., a global chemical material manufacturer and supplier with more than 12 years of experience in the supply of super-high-quality chemicals. Currently, we have developed a variety of materials. Our zinc nitride is produced with high purity, small particles and low impurity. Please send us an e-mail or click the desired products to Send an inquiry .