What property does Bismuth Telluride have?

Bismuth telluride The molecular formula of the powder is Bi2Te3. Bismuth telluride, an indirect band-gap semiconductor, has a band gap of 0.145eV at room temperature, electron mobility of 0.135m2/(V*s) and hole mobility of 4.×10-2m2/ (V*s), and a coefficient of thermoelectric quality of 1.6×10-3/K.
Bismuth Telluride is a dense material with a density 7.8587g/cm3 at a melting temperature of 585degC. It is bound with covalent and ionic bonds. Bismuth telluride exhibits the characteristics of a ‘topological insulator’, allowing electrons on its surface to move freely without wasting any energy.

Bismuth Telluride is prepared by the Bridgman Method, Zone Smelting Method, and Czochralski Method. Bismuth telluride, a semiconductor, has a good electrical conductivity and mediocre thermal conductivity.

What are the applications of Bismuth Teluride?

Bismuth-telluride-based semiconductors have high performance thermoelectric conversion in the low- and mid-temperature range. These materials are used widely in microelectronics for precise temperature control and local refrigeration. The applications of these devices are excellent in thermoelectric power generation and industrial waste heat recovery.

The thermoelectric performance can be improved by optimizing the carrier concentration and phonon diffusion.

The dangers of bismuth-telluride are low but it can be fatal in large doses. The material is able to allow electrons on its surface to move at room temperatures without using energy, resulting in a significant increase in the speed of a chip.

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